TY  - BOOK
AU  - Afanasʹev,Valery V.
TI  - Internal photoemission spectroscopy: fundamentals and recent advances 
T2  - Elsevier insights
SN  - 9780080999296 (hbk.)
AV  - QD96.P5 A34 2014
U1  - 543.62 23
PY  - 2014///
CY  - London
PB  - Elsevier
KW  - Photoelectron spectroscopy
KW  - Photoemission
KW  - Semiconductors
KW  - Junctions
N1  - Previous edition: 2007; Includes bibliographical references; Preliminary remarks and historical overview -- Internal versus external photoemission -- Photoemission into insulators: Physical model -- Internal photoemission spectroscopy methods -- Injection spectroscopy of thin layers of solids -- Analysis of the charge trapping kinetics -- Silicon-insulator interface barriers -- Barriers at interfaces of high-mobility and compound semiconductors -- Electron energy barriers between conducting and insulating oxides -- Conclusions; Also issued online
N2  - "The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well. Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication."--
ER  -